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PTF 10045 30 Watts, 1.60-1.65 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. * Performance at 1650 MHz, 28 Volts - Output Power = 30 Watts - Power Gain = 11.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability
* * * * *
Typical Output Power and Efficiency vs. Input Power
40 60
Output Power (Watts)
Output Power 20 40
Efficiency (%)
30
Efficiency
50
A -1 2
1004 5
3456 9955
VDD = 28V
10
IDQ = 380 mA f = 1650 MHz
0 1 2 3 4
30
0
20
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Thermal Resistance (Tflange = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 120 0.7 150 1.4
Unit
Vdc Vdc C Watts W/C C C/W
e
1
PTF 10045
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 2.0
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1650 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 380 mA, f = 1650 MHz) Drain Efficiency (VDD = 28 V, POUT= 30 W, IDQ = 380 mA, f = 1650 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 380 mA, f = 1650 MHz-- all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min
10.0 30 40 --
Typ
11.5 35 43 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
13 12 Gain (dB) Efficiency (%) 70 60 50 40
Broadband Test Fixture Performance
Gain Efficiency (%) 11 50 40
Gain
11 10 9 8 1400
Gain (dB)
10 9 8 7 6 1600
VDD = 28 V IDQ = 380 mA POUT = 30 W
Return Loss (dB)
- 20 5 -10 10
VDD = 28 V IDQ = 380 mA
1450 1500
Output Power (W)
30
1550
1600
20 1650
1610
1620
1630
1640
-15 0 1650
Frequency (MHz)
Frequency (MHz)
2
Return Loss
0 30
Efficiency
12
60
e
Output Power vs. Supply Voltage
40 -10
PTF 10045
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit) VDD = 28 V, IDQ = 380 mA
Output Power (Watts)
35
-20
f1 = 1549.9 MHz, f2 = 1550.0 MHz
3rd Order
IMD (dBc)
-30 -40 -50 -60
30
5th 7th
25
IDQ = 380 mA f = 1650 MHz
20 24 26 28 30 32 34 36
0
10
20
30
40
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage
120 6
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97
0 40
0.3 0.87 1.44 2.01 2.58 3.15
Cds and Cgs (pF)
100 80 60 40 20 0 0 10
VGS = 0 V f = 1 MHz
5
Voltage normalized to 1.0 V Series show current (A)
Cgs Cds Crss
20 30
3 2 1
Crss (pF)
4
0.96 -20 30 Temp. (C) 80 130
Supply Voltage (Volts)
Impedance Data
VDD = 28 V, POUT = 30 W, IDQ = 380 mA
D
0
Z0 = 10 W
Z Source
Z Load
0 .2
G S
0 .1
Z Load
1400 MHz
Frequency
MHz 1400 1450 1500 1550 1600 1650
Z Source W
R 1.9 1.5 1.1 0.9 0.8 0.7 jX 1.2 0.7 0.5 0.5 0.6 0.7 R 2.0 2.0 2.0 2.0 2.0 1.8
Z Load W
jX 2.1 2.0 2.0 1.9 1.6 1.2 3
1650 MHz 1400 MHz
1650 MHz
Z Source
0.0 0.1 0.2 0.3
PTF 10045
Typical Scattering Parameters
(VDS = 28 V, ID = 1 A)
e
S11 S21 Ang
-169 -170 -171 -172 -172 -175 -174 -176 -175 -178 -176 -179 -177 -180 -179 -178 -180 178 178 178 177 177 176 176 176 174 175 173 175 171 173 170 173
f (MHz)
400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000
S12 Ang
37.8 32.9 33.4 26.3 22.6 20.5 19.7 11.5 13.0 10.4 9.64 5.00 8.43 3.80 0.10 0.37 3.62 -2.34 0.68 -3.51 -0.82 -6.53 -2.30 -5.00 -4.08 -9.41 -6.95 -9.70 -9.64 -11.4 -10.6 -13.8 -13.1
S22 Ang
-18.1 -10.1 0.014 11.2 41.0 58.5 71.2 66.9 77.9 78.2 78.1 82.7 85.2 77.2 79.0 81.5 75.5 75.4 76.0 75.4 71.1 78.4 74.3 78.7 76.9 81.1 77.3 77.9 79.0 74.3 73.5 64.7 63.2
Mag
0.933 0.933 0.951 0.937 0.971 0.952 0.968 0.949 0.975 0.982 0.964 0.972 0.971 0.983 0.962 0.996 0.959 0.989 0.971 0.981 0.983 0.968 0.965 0.960 0.950 0.950 0.950 0.952 0.950 0.954 0.960 0.960 0.960
Mag
4.28 3.48 2.98 2.63 2.20 1.91 1.76 1.49 1.30 1.21 1.05 0.923 0.887 0.793 0.736 0.672 0.642 0.585 0.553 0.516 0.492 0.443 0.444 0.405 0.391 0.360 0.365 0.330 0.317 0.299 0.314 0.285 0.290
Mag
0.005 0.004 0.003 0.002 0.003 0.003 0.004 0.005 0.006 0.007 0.007 0.008 0.010 0.011 0.011 0.013 0.012 0.013 0.014 0.015 0.014 0.015 0.017 0.017 0.019 0.019 0.022 0.022 0.025 0.026 0.030 0.030 0.034
Mag
0.833 0.859 0.936 0.940 0.924 0.935 0.946 0.946 0.951 0.945 0.917 0.931 0.949 0.958 0.931 0.970 0.956 0.965 0.961 0.967 0.977 0.952 0.985 0.962 0.998 0.950 0.955 0.950 0.960 0.947 0.950 0.948 0.980
Ang
-154 -157 -153 -157 -161 -166 -165 -171 -168 -172 -173 -176 -171 -174 -173 -176 -175 -177 -176 -177 -178 -178 -179 -180 -180 179 179 178 179 175 177 174 177
Test Circuit
Test Circuit Schematic for f = 1650 MHz
4
e
PTF 10045
Placement Diagram (not to scale)
DUT
l1 l2 l5 l6 l3 l4
C1 C2, C3, C6, C9 C4, C5 C7 C8 L1, L2 R1, R2 Circuit Board
PTF 10045 .090 l @ 1650 MHz Microstrip 50 W .265 l @ 1650 MHz Microstrip 50 W .215 l @ 1650 MHz Microstrip 50 W .100 l @ 1650 MHz Microstrip 50 W .115 l @ 1650 MHz Microstrip 6.4 W .170 l @ 1650 MHz Microstrip 9.2 W 0.6 pF, Capacitor ATC 100 B 33 pF, Capacitor ATC 100 B 0.6-3.6 pF, Variable Capacitor, Johanson 0.1 mF, 50 V, Capacitor Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 3 Turn, #20 AWG, .120" I.D. 220 W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L2 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10045 Uen Rev. A 01-27-99
5
e
Notes:
6

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